Recent advances in MOCVD process technology for the growth of compound semiconductor devicesSCHINELLER, B; HEUKEN, M.Applied physics. A, Materials science & processing (Print). 2007, Vol 87, Num 3, pp 479-483, issn 0947-8396, 5 p.Article

Investigation of GaInN films and development of double-hetero (DH) structures for blue and green light emittersSCHWAMBERA, M; SCHOEN, O; SCHINELLER, B et al.Journal of crystal growth. 1999, Vol 203, Num 3, pp 340-348, issn 0022-0248Article

High efficiency integral III-N/II-VI blue-green laser converterSOROKIN, S. V; SEDOVA, I. V; HEUKEN, M et al.Electronics Letters. 2007, Vol 43, Num 3, pp 162-163, issn 0013-5194, 2 p.Article

Uniformity control of 3 inch GaN/InGaN layers grown in Planetary Reactors®BECCARD, R; PROTZMANN, H; LUENENBUERGER, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 80, Num 1-3, pp 50-53, issn 0921-5107Conference Paper

Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diodeSCHINELLER, B; JUNAS, Y; HEUKEN, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 51, Num 1-3, pp 34-38, issn 0921-5107Conference Paper

Important aspects for the mass production of GaN-based quantum devices grown by MOCVDSOELLNER, J; SCHOEN, O; ALAM, A et al.Thin solid films. 2007, Vol 515, Num 10, pp 4362-4364, issn 0040-6090, 3 p.Conference Paper

Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPELUTSENKO, E. V; PAVLOVSKII, V. N; KAZLAUSKAS, K et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1759-1763, issn 1862-6300, 5 p.Conference Paper

Luminescence and stimulated emission from gan on silicon substrates heterostructuresYABLONSKII, G. P; LUTSENKO, E. V; SCHINELLER, B et al.Physica status solidi. A. Applied research. 2002, Vol 192, Num 1, pp 54-59, issn 0031-8965Conference Paper

Photoluminescence of GaN : Mg grown by metalorganic vapor-phase epitaxy (MOVPE)LIM, P. H; SCHINELLER, B; SCHÖN, O et al.Journal of crystal growth. 1999, Vol 205, Num 1-2, pp 1-10, issn 0022-0248Article

Compensation effects in Mg-doped GaN epilayersECKEY, L; VON GFUG, U; HOLSTA, J et al.Journal of crystal growth. 1998, Vol 189-90, pp 523-527, issn 0022-0248Conference Paper

Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactorHEMMINGSSON, C; POZINA, G; HEUKEN, M et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 906-910, issn 0022-0248, 5 p.Conference Paper

Group-III nitride growth in production scale MOVPE systemsSCHINELLER, B; PROTZMANN, H; LUENENBUERGER, M et al.Journal de physique. IV. 2001, Vol 83, pp Pr3.1073-Pr3.1077, issn 1155-4339Conference Paper

Multiple quantum well InGaN/GaN blue optically pumped lasers operating in the spectral range of 450-470 nmYABLONSKII, G. P; LUTSENKO, E. V; HEUKEN, M et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 1, pp 79-82, issn 0031-8965Conference Paper

Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy : III-V nitrides and silicon carbideYABLONSKII, G. P; GURSKII, A; SCHMITZ, D et al.Journal of electronic materials. 1998, Vol 27, Num 4, pp 222-228, issn 0361-5235Article

Optical properties and lasing of ZnMgSSe/ZnSSe/ZnSe heterostructures grown by MOVPEGURSKII, A. L; LUTSENKO, E. V; YABLONSKII, G. P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 51, Num 1-3, pp 22-25, issn 0921-5107Conference Paper

Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactorHEMMINGSSON, C; PASKOV, P. P; POZINA, G et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 32-36, issn 0022-0248, 5 p.Conference Paper

Mass production of GaAs based optoelectronic devices in an AIX 2600G3 reactor in the 49x2 inch configurationSCHINELLER, B; SCHMITT, T; CHRISTIANSEN, K et al.Proceedings - Electrochemical Society. 2004, pp 87-94, issn 0161-6374, isbn 1-56677-407-1, 8 p.Conference Paper

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrateMARSO, M; JAVORKA, P; JANSEN, R. H et al.Physica status solidi. A. Applied research. 2003, Vol 200, Num 1, pp 179-182, issn 0031-8965, 4 p.Conference Paper

Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopyNGUYEN, N. D; GERMAIN, M; SCHMEITS, M et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 2, pp 385-389, issn 0370-1972Conference Paper

Time- and temperature-resolved photoluminescence of GaN:Mg epitaxial layers grown by MOVPEGURSKII, A. L; MARKO, I. P; LUTSENKO, E. V et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 2, pp 361-364, issn 0370-1972Conference Paper

GaInN/GaN heterostructures grown in production scale MOVPE reactorsSCHOEN, O; PROTZMANN, H; ROCKENFELLER, O et al.Journal de physique. IV. 1999, Vol 9, Num 8, pp Pr8.1035-Pr8.1039, issn 1155-4339, 2Conference Paper

The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN : Mg grown by MOVPESCHINELLER, B; GUTTZEIT, A; LIM, P. H et al.Journal of crystal growth. 1998, Vol 195, Num 1-4, pp 274-279, issn 0022-0248Conference Paper

Comparison of hydrogen and nitrogen as carrier gas for MOVPE growth of GaNSCHÖN, O; SCHINELLER, B; HEUKEN, M et al.Journal of crystal growth. 1998, Vol 189-90, pp 335-339, issn 0022-0248Conference Paper